Features:
- The IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver.
- Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
- The logic input is compatible with standard CMOS outputs.
- The output driver features a high pulse current buffer stage designed for minimum cross-conduction.
- The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
- CMOS Schmitt-triggered inputs with pull-down.
- Output in phase with input.
Pin Configurations:
Specifications:
| Product Attribute | Attribute Value |
| Datasheet | IR2118 |
| Product Category | Gate Drivers |
| Technology | Si |
| Product | IGBT, MOSFET Gate Drivers |
| Type | High-Side |
| Number of Drivers | 1 Driver |
| Number of Outputs | 1 Output |
| Channel Type | Single |
| Logic Type | CMOS |
| Package/Case | DIP-8 |
| Mounting Style | Through Hole |
| Output Current | 200 mA |
| Supply Voltage – Min | 10 V |
| Supply Voltage – Max | 20 V |
| Operating Supply Current | 340 µA |
| Operating Supply Voltage | 1.225 kV |
| Pd – Power Dissipation | 1 W |
| Rise Time | 80 ns |
| Fall Time | 40 ns |
| Maximum Turn-Off Delay Time | 105 ns |
| Maximum Turn-On Delay Time | 125 ns |
| Propagation Delay – Max | 200 ns |
| Operating Temperature Range | – 40 C to +125 C |
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